为了研究声子晶体因缺陷而产生的声波导问题，提出了同质位错缺陷模型。
A homogeneous dislocation defect model was established to study the sonic waveguide of a photonic crystal with defects.
实验结果表明，金刚石晶体中存在有位错、亚结构及包裹体等缺陷。
The results show that there do exist some defects in the diamonds such as dislocation, substructure, inclusion, etc.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
用高分辨电子显微镜对铬酸镧的晶体结构及晶界、位错等晶体缺陷进行了观察与分析。
The crystal structure and some defects such as tilt boundary and dislocation of lanthanum chromates were investigated by high resolution microscopy (HERM).
数学上，位错属于一种拓扑缺陷，有时称为“孤立子”或“孤子”。
Mathematically, dislocations are a type of topological defect, sometimes called a soliton.
缺陷组态直接涉及到结构材料的力学性能，特别是位错亚结构(DSS)为最重要的缺陷组态中的第一个。
The defect configuration relates directly to the mechanical behaviour of structural materials. Especially, dislocation substructure, DSS, is one of the most important configurations.
这些缺陷包括位错、异质结构夹层、双晶、云层、包裹体、开裂等。
These defects include dislocations, heterojunction layer twins, clouds, inclusions, and cracks.
我们还研究了熔化过程中缺陷的行为，体系的本征结构等，发现位错对与向错的行为不同于kthny理论的预测。
We also explore the defects patterns, inherent structure etc, and find that dislocations and disclinations' behavior are different from prediction of KTHNY theory.
这些缺陷包括：包裹物，色心，开裂，台阶面，位错，小角晶界和位错塞积群。
The defects include cracks, color center, inclusions, step-faceting, low-angle boundaries and dislocation pile-up group.
根据非线性缺陷连续统的4维几何理论，导出了位错和旋错的连续性方程。
On the basis of the 4-dimensional geometric theory of the nonlinear defect continuum, the continuity equations of dislocations and disclinations are derived.
分析认为，冷塑性变形可使位错等缺陷增加，有利于硼原子的吸收与扩散。
The analysis indicates that cold plastic deformation results in crystal lattice defects, which facilitates the absorption and diffusion of boron atoms.
用常规化学腐蚀法显示出单晶硅中的缺陷，观察典型的位错。
By using the routine chemical corrosion, show the defect of the Monocrystalline Silicon; find the typical linear deranged.
低温退火可以避免在顶部硅层中氧沉淀及延伸位错等缺陷的形成。
The formation of oxygen precipitates and threading dislocations in top Si layer could be avoided by low temperature annealing.
此外还讨论了生长条纹、组分过冷、应力和位错等缺陷问题。
The defects such as growth striation constitutional supercooling, stress and dislocation are also dis-cussed in the paper.
受位错附近应力场与气流的影响，V缺陷两侧出现带状高坡。
Influenced by the gas flow pattern and stress field near the dislocations, strip ribbons lied beside the V defects.
同时在界面附近存在着大量位错和孪晶等晶体缺陷。
Also there are a lot of crystal defects, such as dislocations and twins, found near the interface.
在此基础上实验观察了白宝石单晶中的位错、亚晶界和小品面等缺陷的形态、数量及分布，讨论了生长条件对它们的影响。
The void formation and its micrograph of distribution, density as well as void size in sapphire single crystal grown by EFG were investigated.
在此基础上实验观察了白宝石单晶中的位错、亚晶界和小品面等缺陷的形态、数量及分布，讨论了生长条件对它们的影响。
The void formation and its micrograph of distribution, density as well as void size in sapphire single crystal grown by EFG were investigated.
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