金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
作为VLS I互连线的金属薄膜的截面积越来越小，其承受的功率密度急剧增加，使得电迁移成为电路的主要失效模式之一。
Consequently, the metal interconnects of VLSI have smaller sectional area and carry increasing power density, which made the electromigration become one of the main latent damage modes.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
COF是一种高性能、多芯片封装工艺技术，在此封装中把芯片包入模塑塑料基板中，通过在元器件上形成的薄膜结构构成互连。
COF is a high performance, multichip packaging technology in which dies are encased in a molded plastic substrate and interconnects are made via a thin-film structure formed over the components.
COF是一种高性能、多芯片封装工艺技术，在此封装中把芯片包入模塑塑料基板中，通过在元器件上形成的薄膜结构构成互连。
COF is a high performance, multichip packaging technology in which dies are encased in a molded plastic substrate and interconnects are made via a thin-film structure formed over the components.
应用推荐