因此随之而来的问题是:由于在形成热氧化物的时候,由于硅和氧的不完全反应,在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
因此随之而来的问题是:由于在形成热氧化物的时候,由于硅和氧的不完全反应,在硅和二氧化硅的界面会生成一氧化硅的气态不稳定物质。
So the problem is coming that SiO gaseous unstable matter is made in the interface of silicon and silicon dioxide due to silicon and oxygen incomplete reaction when making thermal oxide layer.
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