MRAM, a next-generation memory based on magnetic materials, has emerged as an alternative to SRAM because it is non-volatile, cutting leak current during standby status.
Introduction of this newly designed "normally-off" memory circuit with no passes for current to leak into cuts leak current to zero in both operation and standby without any specific power supply management.
However, improving the performance of SRAM to match advances in mobile products results in increasing current leakage, both during operation and in standby mode, degrading power performance.