Samsung and Toshiba will focus on assuring a 400Mbps interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40Mbps SDR NAND in widespread use today.
The new 12 Gbps specification will eventually allow the host system to decide how much power a storage device with the interface should use, allowing up 25 W. It will also allow atomic writes, which will improve system performance as well as providing more resilient system designs.