此外，电阻式存储器元件连接于接触窗插塞与位线之间。
Moreover, the resistive memory element is connected between the contact plug and the bit line.
本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。
The invention is directed to a resistive memory cell on a substrate and a resistive memory array.
所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。
The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
同时，与普通电阻式随机存储器的存储单元相比，进一步简化了器件结构，并能提高器件的热稳定性。
At the same time, compared with the storage unit of an ordinary resistance type random memory, the invention further simplifies the device structure, and can improve the thermal stability of devices.
同时，与普通电阻式随机存储器的存储单元相比，进一步简化了器件结构，并能提高器件的热稳定性。
At the same time, compared with the storage unit of an ordinary resistance type random memory, the invention further simplifies the device structure, and can improve the thermal stability of devices.
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