研究了低电压的静电放电(esd)对微电子器件造成的潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
研究了低电压的静电放电(esd)对微电子器件造成的事件相关潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
研究了低电压的静电放电(esd)对微电子器件造成的事件相关潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
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