在得到洞以后，我修正了面部的模型，让他重新变成四边面。
After getting the hole, I corrected the face model to get it back quads again.
在井的四边，磁力线相当高，并急剧地升到银道面以上。
At the sides of the well the magnetic field lines are quite high and rise steeply above the galactic plane.
棱柱（体），角柱（体）多面固体，上下两底面大小、形状相同，且彼此平行，其余诸面则为平行四边形。
A solid figure whose bases or ends have the same size and shape and are parallel to one another and each of whose sides is a parallelogram.
提出方便实用的、适合于内外域交界面为四边形或六面体情况的几何变换函数。
A convenient and applied geometric transformation function, which is suit for interface of quadrangle or hexahedron, is proposed.
螺旋桨表面和它的尾涡面离散为四边形双曲面元，每个面元上布置等强度偶极子和源汇分布。
The surface of propeller and its trailing vortex is divided into a number of small hyperboloidal quadrilateral panels with constant source sink and doublet distributions.
对简支各向异性平行四边形板在面内张力和剪力作用下自由振动、屈曲和弯曲问题作了全面的研究。
A comprehensive study of free vibration, buckling and bending of anisotropic simply-supported skew plates subjected to in-plane normal and shear forces is conducted.
利用该软件，可生成三维八节点六面体单元，同时也可生成二维三角形和四边形单元。
Hexhedral element for three dimensional parts and triangle and quadrilateral mesh for two dimensional parts can be generated.
不等边四边形的其余部分便是园子，园子要比波隆梭街的街面低许多，因此围墙在园里一面和外面比起来要高些。
The remainder of the trapezium formed the garden, which was much lower than the level of the Rue Polonceau, which caused the walls to be very much higher on the inside than on the outside.
发现通过改变实验条件可以合成不同形貌的草酸钙晶体，如平行四边形，片状，球形，八面双锥体等；
The results show that various crystal morphologies of calcium oxalate, such as, parallelograms, plates, spheres, bipyramids etc. can be obtained depending on the experimental conditions.
平行面（底面）且侧面都是平行四边形的多面体。
The perpendicular distance from the base of a geometric figure to the opposite vertex, parallel side, or parallel surface.
对原来硅锭的四边平面垂直度起到修正功能，确保硅锭四面及棱角的损伤层有效的去除。
It can correct the verticality of the four faces of the original silicon ingots to ensure the affected layers of the four faces and edges are effectively removed.
对原来硅锭的四边平面垂直度起到修正功能，确保硅锭四面及棱角的损伤层有效的去除。
It can correct the verticality of the four faces of the original silicon ingots to ensure the affected layers of the four faces and edges are effectively removed.
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